The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Mar. 01, 2016
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Sergiu Radu Goma, San Diego, CA (US);

Biay-Cheng Hseih, Irvine, CA (US);

Todor Georgiev Georgiev, Sunnyvale, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/369 (2011.01); H04N 5/33 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H04N 5/332 (2013.01); H04N 5/369 (2013.01);
Abstract

Various embodiments are directed to an image sensor that includes a first sensor portion and a second sensor portion coupled to the first sensor portion. The second sensor portion may be positioned relative to the first sensor portion so that the second sensor portion may initially detect light entering the image sensor, and some of that light passes through the second sensor portion and is be detected by the first sensor portion. In some embodiments, the second sensor portion may be configured to have a thickness suitable for sensing visible light. The first sensor portion may be configured to have a thickness suitable for sensing IR or NIR light. As a result of the arrangement and structure of the second sensor portion and the first sensor portion, the image sensor captures substantially more light from the light source.


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