The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Aug. 03, 2016
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, Hubei, CN;

Inventor:

Zijian Li, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1285 (2013.01); G02F 1/1368 (2013.01); H01L 27/1222 (2013.01); H01L 27/1262 (2013.01); H01L 29/78675 (2013.01); G02F 2202/104 (2013.01);
Abstract

The present disclosure relates to a LTPS TFT unit for liquid crystal modules and the manufacturing method thereof. The manufacturing method includes: forming a SiNx layer on a glass substrate; forming a SiOx layer and an a-Si layer on the SiNx layer in sequence; scanning the a-Si layer by laser beams to remove hydrogen within the a-Si layer; adopting excimer laser to re-crystallization anneal the a-Si layer to form the polysilicon layer; forming a gate insulation layer on the polysilicon layer; forming a gate on the gate insulation layer; and forming a drain insulation layer on the gate.


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