The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Jan. 28, 2015
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventor:

Chao Dai, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1368 (2006.01); H03K 19/0944 (2006.01); G09G 3/36 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1368 (2013.01); H01L 27/1225 (2013.01); H03K 19/0944 (2013.01); G09G 3/3677 (2013.01); G09G 2300/0408 (2013.01); G09G 2310/0291 (2013.01);
Abstract

The invention provides a scan driving circuit for an oxide semiconductor thin film transistor and a NAND logic operation circuit thereof. The NAND logic operation circuit includes: a first inverter and a second inverter applied to a pull-down holding circuit of a GOA circuit, and multiple transistors. The invention uses the combination of NFTF and inverter to replace a function of original PMOS elements and thereby achieves characteristics similar to that of the original CMOS NAND operation circuit. Accordingly, the invention can solve the design problem of IGZO TFT single type of device logic operation circuit and thus is more suitable for integrating a large scale digital integrated circuit on a liquid crystal display device.


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