The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Dec. 22, 2016
Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Benoit Mathieu, Grenoble, FR;
Claire Fenouillet-Beranger, Voiron, FR;
Abstract
This method comprises the following steps: a) providing a first structure successively comprising a first substrate, a first electronic device, and a first dielectric layer; a second structure successively comprising a second substrate, an active layer, a second dielectric layer, and a polycrystalline semiconductor layer, the active layer being designed to form a second electronic device; b) bombarding the polycrystalline semiconductor layer by a beam of species configured to form an amorphous part and to preserve a superficial polycrystalline part; c) bonding the first and second structures; d) removing the second substrate of the second structure; e) introducing dopants into the amorphous part, through the exposed active layer; f) thermally activating the dopants by recrystallization of the amorphous part.