The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Aug. 08, 2016
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Kazunobu Kuwazawa, Sakata, JP;

Hiroaki Nitta, Sakata, JP;

Takehiro Endo, Sakata, JP;

Mitsuo Sekisawa, Sakata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/488 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/04 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/07 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 24/11 (2013.01); H01L 24/12 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/15 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/43 (2013.01); H01L 24/47 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/48463 (2013.01);
Abstract

A semiconductor apparatus includes elements formed on a substrate, a first insulation layer, a first pad and a second pad arranged on the first insulation layer and located above the elements, and a second insulation layer that is arranged on the side surfaces and upper surfaces of the first pad and the second pad. The second insulation layer includes openings at upper surfaces of the first pad and the second pad. The thickness of the first pad and the second pad is 2 μm or more, the thickness of the second insulation layer is less than or equal to ⅖ of the thickness of the first pad and the second pad, and the distance between the first pad and the second pad is greater than or equal to four times the thickness of the first pad and the second pad.


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