The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Jan. 19, 2017
Toshiba Memory Corporation, Minato-ku, JP;
Weiting Wang, Kawasaki, JP;
Fumiharu Nakajima, Yokohama, JP;
Yoko Yokoyama, Minato-ku, JP;
Sadatoshi Murakami, Yokohama, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
According to an embodiment, a manufacturing method of a semiconductor device includes forming, on a film to be processed, a plurality of first core material patterns and a plurality of second core material patterns. Each of the second core material patterns is drawn from an end portion of the corresponding first core material pattern. The manufacturing method includes forming an opening pattern having one or a plurality of openings in the second core material pattern so that a first distance and a second distance are less than a predetermined distance. The first distance is a distance between an edge of the second core material pattern at a side of an adjacent first core material pattern and the opening pattern. The second distance is a distance between an edge of the second core material pattern at a side of an adjacent second core material pattern and the opening pattern.