The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Feb. 13, 2017
Applicant:
The Industry & Academic Cooperation IN Chungnam National University (Iac), Daejeon, KR;
Inventors:
Hi Deok Lee, Daejeon, KR;
Meng Li, Chungcheongbuk-do, KR;
Geon Ho Shin, Daejeon, KR;
Jeongchan Lee, Chungcheongnam-do, KR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76886 (2013.01); H01L 21/28568 (2013.01); H01L 21/28575 (2013.01); H01L 21/76895 (2013.01);
Abstract
Disclosed is a method for reducing contact resistance, including depositing a GST layer on an InGaAs substrate, generating an InGaAs/GST/Ni stacked structure by depositing a Ni layer on the GST layer, and thermally treating the stacked structure to rearrange components of the GST layer and to generate a Ni—InGaAs alloy.