The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Sep. 16, 2015
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Akihisa Shimomura, Kanagawa, JP;
Naoki Okuno, Kanagawa, JP;
Mitsuhiro Ichijo, Kanagawa, JP;
Noriyoshi Suzuki, Kanagawa, JP;
Tetsuhiro Tanaka, Kanagawa, JP;
Sachiaki Tezuka, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.