The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Oct. 20, 2015
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Deepak Raghu, Milpitas, CA (US);

Chris Aviala, Saratoga, CA (US);

Harish Singidi, Santa Clara, CA (US);

Guirong Liang, Santa Clara, CA (US);

Anne Pao-Ling Koh, Femont, CA (US);

Dana Lee, Saratoga, CA (US);

Gautam Dusija, Milpitas, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/061 (2013.01); G06F 3/0619 (2013.01); G06F 3/0647 (2013.01); G06F 3/0679 (2013.01);
Abstract

Systems and methods for sampling data at a non-volatile memory system are disclosed. In one implementation, a controller of a non-volatile memory system that is coupled with a host device acquires a read level voltage of a first word line of a memory block of a non-volatile memory of the non-volatile memory system. The controller accesses one or more lookup tables to determine an offset voltage for a second word line of the memory block based on a program/erase count and a read/disturb count associated with the memory block; applies the read level voltage and the offset voltage to the second word line to sample data stored at the memory block; and determines whether the data sampled from the memory block contains errors.


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