The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Feb. 13, 2015
Qualcomm Incorporated, San Diego, CA (US);
Christopher Edward Koob, Round Rock, TX (US);
Xufeng Chen, San Diego, CA (US);
Robert Allan Lester, Round Rock, TX (US);
Manojkumar Pyla, San Diego, CA (US);
Peixin Zhong, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
The feature size of semiconductor devices continues to decrease in each new generation. Smaller channel lengths lead to increased leakage currents. To reduce leakage current, some power domains within a device may be powered off (e.g., power collapsed) during periods of inactivity. However, when power is returned to the collapsed domains, circuitry in other power domains may experience significant processing overhead associated with reconfiguring communication channels to the newly powered domains. Provided in the present disclosure are exemplary techniques for isolating power domains to promote flexible power collapse while better managing the processing overhead associated with reestablishing data connections.