The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2017

Filed:

Jan. 02, 2017
Applicant:

Halliburton Energy Services, Inc., Houston, TX (US);

Inventors:

Wenshan Yu, Houston, TX (US);

Yumei Tang, Tomball, TX (US);

Michael S. Bittar, Houston, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01V 3/24 (2006.01); G01V 3/26 (2006.01); G01V 99/00 (2009.01); E21B 41/00 (2006.01); E21B 49/00 (2006.01); E21B 47/12 (2012.01);
U.S. Cl.
CPC ...
G01V 99/005 (2013.01); E21B 41/0092 (2013.01); E21B 47/12 (2013.01); E21B 49/00 (2013.01); G01V 3/24 (2013.01); G01V 3/26 (2013.01);
Abstract

Techniques for processing down hole information including detecting bed boundaries are disclosed. In some embodiments, a bottom hole assembly includes a down hole tool and a processing apparatus. The down hole tool includes at least one antenna pair to determine resistivity data during rotation of the down hole tool. The processing apparatus is attached to the down hole tool and includes a machine-readable medium that stores a formation model database comprising multiple formation models. The processing apparatus further includes a processor that executes program code to receive the resistivity data during down hole operation of the down hole tool, and to solve for at least resistivity formation parameters using a selected one of the formation models and a selected portion of the received resistivity data. The processor further executes program code to update the selected formation model based, at least in part, on the resistivity formation parameters.


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