The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
May. 26, 2016
Applicant:
Digitaloptics Corporation Mems, San Jose, CA (US);
Inventors:
Ankur Jain, Cerritos, CA (US);
Roman C. Gutierrez, Arcadia, CA (US);
Shi-Sheng Lee, Arcadia, CA (US);
Robert J. Calvet, Pasadena, CA (US);
Xiaolei Liu, South Pasadena, CA (US);
Assignee:
DigitalOptics Corporation MEMS, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); G03B 3/10 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0077 (2013.01); B81C 1/00571 (2013.01); G03B 3/10 (2013.01); B81B 2201/031 (2013.01); B81B 2203/033 (2013.01); G03B 2205/0061 (2013.01);
Abstract
A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.