The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Jan. 06, 2016
Applicant:
Altera Corporation, San Jose, CA (US);
Inventor:
Christopher Sun Young Chen, San Jose, CA (US);
Assignee:
Altera Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 19/177 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 19/1774 (2013.01); H03K 19/018585 (2013.01); H03K 19/1776 (2013.01);
Abstract
Transistors degrade when subjected to voltage stress. Methods are described for reducing this aging problem by applying a reverse voltage to the gates of the circuit on an intermittent or periodic basis. By applying such a voltage for a brief period of time such as one second, the aging process is essentially nullified.