The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Jan. 18, 2016
Applicant:

Northwestern University, Evanston, IL (US);

Inventors:

Joseph S. Friedman, Rochester, NY (US);

Gokhan Memik, Evanston, IL (US);

Bruce W. Wessels, Wilmette, IL (US);

Assignee:

Northwestern University, Evanston, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/094 (2006.01); H03K 19/082 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01); H01L 29/78 (2006.01); H01L 29/82 (2006.01); H03K 19/086 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H03K 19/094 (2013.01); H01L 29/66984 (2013.01); H01L 29/73 (2013.01); H01L 29/7371 (2013.01); H01L 29/78 (2013.01); H01L 29/82 (2013.01); H03K 19/082 (2013.01); H03K 19/086 (2013.01);
Abstract

A switch comprising a spin-transistor and a first control wire. The spin-transistor is configured so that when a magnetic field applied to the spin-transistor is less than a threshold value, the transistor is in a conductive state in which electric current flows through the spin-transistor. When the magnetic field applied to the spin-transistor is greater than the threshold value, the spin-transistor is in a resistive state in which the electric current flowing through the spin-transistor is substantially reduced. The first control wire is for receiving a current to affect the magnetic field applied to the spin-transistor.


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