The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
May. 27, 2014
Samsung Electro-mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
University of Seoul Industry Cooperation Foundation, Seoul, KR;
Sang Hyun Cha, Suwon-Si, KR;
Deuk Hee Park, Suwon-Si, KR;
Yun Joong Lee, Suwon-Si, KR;
Joong Ho Choi, Seongnam-Si, KR;
Je Hyeon Yu, Suwon-Si, KR;
Hyeon Seon Yu, Seongnam-Si, KR;
Chang Seok Lee, Suwon-Si, KR;
Abstract
A gate driving circuit may include: a bias unit receiving an input signal having preset high and low signal levels, including a first N-MOSFET turned on in the case in which the input signal has the high level and a first P-MOSFET turned on in the case in which the input signal has the low level, and supplying bias powers by the turning-on of the first N-MOSFET and the first P-MOSFET; and an amplifying unit including a second N-MOSFET turned on by receiving the bias power supplied from the first N-MOSFET in the case in which the input signal has the high level and a second P-MOSFET turned on by receiving the bias power supplied from the first P-MOSFET turned on in the case in which the input signal has the low level and providing a gate signal depending on the turning-on of the second N-MOSFET and the second P-MOSFET.