The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Dec. 08, 2015
Applicant:

Oclaro Japan, Inc., Kanagawa, JP;

Inventors:

Koichiro Adachi, Tokyo, JP;

Takanori Suzuki, Tokyo, JP;

Yasushi Sakuma, Tokyo, JP;

Kazuhiko Naoe, Kanagawa, JP;

Akira Nakanishi, Tokyo, JP;

Assignee:

OCLARO JAPAN, INC., Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01S 5/12 (2006.01); H01S 5/20 (2006.01); H01S 5/125 (2006.01); H01S 5/026 (2006.01); H01S 5/028 (2006.01); H01S 5/22 (2006.01); H01S 5/227 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1231 (2013.01); H01S 5/209 (2013.01); H01S 5/0267 (2013.01); H01S 5/0287 (2013.01); H01S 5/125 (2013.01); H01S 5/22 (2013.01); H01S 5/2275 (2013.01);
Abstract

Provided is a butt-jointed (BJ) semiconductor integrated optical device having a high manufacturing yield. A semiconductor integrated optical device, which is configured such that, on a semiconductor substrate, a first semiconductor optical element including an active layer and a second semiconductor optical element including a waveguide layer are butt-jointed to each other with their optical axes being aligned with each other, includes: a semiconductor regrowth layer including at least one of a diffraction grating layer or an etching stop layer, which is formed by one epitaxial growth across an entire surface above the active layer and the waveguide layer; and a cladding layer formed above the semiconductor regrowth layer.


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