The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Feb. 17, 2015
Applicant:
Oclaro Japan, Inc., Kanagawa, JP;
Inventors:
Takeshi Kitatani, Tokyo, JP;
Shinji Sasaki, Nagano, JP;
Assignee:
OCLARO JAPAN, INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/12 (2006.01); H01S 5/026 (2006.01); H01S 5/227 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01); H01S 5/323 (2006.01); H01S 5/062 (2006.01); H01S 5/18 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1231 (2013.01); H01S 5/0265 (2013.01); H01S 5/2275 (2013.01); H01S 5/3063 (2013.01); H01S 5/0267 (2013.01); H01S 5/06226 (2013.01); H01S 5/18 (2013.01); H01S 5/2224 (2013.01); H01S 5/32325 (2013.01); H01S 5/34306 (2013.01); H01S 5/34326 (2013.01);
Abstract
To provide a semiconductor optical device with device resistance reduced for optical communication. The semiconductor optical device includes an active layer () for emitting light through recombination of an electron and a hole; a diffraction grating () having a pitch defined in accordance with an output wavelength of the light emitted; a first semiconductor layer () including at least Al, made of In and group-V compound, and formed on the diffraction grating; and a second semiconductor layer () including Mg, made of In and group-V compound, and formed on the first semiconductor layer ().