The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Dec. 29, 2015
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Hideyuki Fujimoto, Anan, JP;

Masatoshi Nakagaki, Komatsushima, JP;

Assignee:

NICHIA CORPORATION, Anan-Shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/022 (2006.01); H01S 5/024 (2006.01); H01S 5/323 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02272 (2013.01); H01L 24/27 (2013.01); H01L 24/31 (2013.01); H01S 5/024 (2013.01); H01S 5/02236 (2013.01); H01S 5/02268 (2013.01); H01S 5/02469 (2013.01); H01S 5/32341 (2013.01); H01L 2224/27005 (2013.01); H01L 2224/32113 (2013.01); H01L 2224/48091 (2013.01); H01S 5/02476 (2013.01);
Abstract

A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.


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