The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Apr. 19, 2016
Applicant:
Seoul National University R&db Foundation, Seoul, KR;
Inventors:
Assignee:
Seoul National University R&DB Foundation, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5296 (2013.01); H01L 51/56 (2013.01);
Abstract
A vertical-type organic light-emitting transistor for reducing the off-state leakage current to improve the current and on-off ratio includes a gate electrode, a lower semiconductor layer disposed on the gate electrode, a source electrode disposed on the lower semiconductor layer, and a source insulation film disposed on the source electrode and covering top and sides of the source electrode, wherein the lower semiconductor layer is configured such that an electric charge is injected into the lower semiconductor layer from the source electrode when voltage is applied to the gate electrode.