The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Jul. 28, 2014
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventors:
Bo-Mi Lee, Icheon-Si, KR;
Cha-Deok Dong, Icheon-Si, KR;
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01); G11C 11/15 (2006.01); G11C 11/155 (2006.01); H01L 21/28 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/15 (2013.01); G11C 11/155 (2013.01); G11C 11/161 (2013.01); H01L 21/28141 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11C 11/1675 (2013.01); G11C 2211/5615 (2013.01);
Abstract
An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a variable resistance element having a stacked structure of a first magnetic layer, a tunnel barrier layer, and a second magnetic layer; and a protection layer including a pillar-shaped magnetic compensation layer and a non-magnetic layer, which are formed on the sidewall of the variable resistance element.