The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Aug. 16, 2016
Applicants:

Christopher F. Kirby, Gambrills, MD (US);

Michael Rennie, Mechanicsville, VA (US);

Daniel J. O'donnell, Manassas, MD (US);

Inventors:

Christopher F. Kirby, Gambrills, MD (US);

Michael Rennie, Mechanicsville, VA (US);

Daniel J. O'Donnell, Manassas, MD (US);

Assignee:

Northrop Grumman Systems Corporation, Falls Church, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 39/22 (2006.01); H01L 39/02 (2006.01); H01L 39/24 (2006.01);
U.S. Cl.
CPC ...
H01L 39/223 (2013.01); H01L 39/025 (2013.01); H01L 39/2406 (2013.01); H01L 39/2493 (2013.01);
Abstract

A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a base electrode in the first dielectric layer with the base electrode having a top surface aligned with the top surface of the first dielectric layer. The method further comprises forming a Josephson junction (JJ) over the base electrode, depositing a second dielectric layer over the JJ, the base electrode and the first dielectric layer, and forming a first contact through the second dielectric layer to the base electrode to electrically couple the first contact to a first end of the JJ, and a second contact through the second dielectric layer to a second end of the JJ.


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