The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Mar. 04, 2015
Tdk Corporation, Tokyo, JP;
Kazuya Maekawa, Tokyo, JP;
Takashi Asatani, Tokyo, JP;
TDK CORPORATION, Tokyo, JP;
Abstract
A thermoelectric device includes a semiconductor stacked thermoelectric thin film including a first high-purity layer composed of SiGe as a main material and a composite carrier supply layer formed on the first high-purity layer. The composite carrier supply layer includes a second high-purity layer and third high-purity layer composed of Si as a main material, and a carrier supply layer held between the second and third high-purity layers and composed of SiGe as a main material. The carrier supply layer is a P-type carrier supply layer to which an additive of a group XIII element is added or a N-type carrier supply layer to which an additive of a group XV element is added.