The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Jun. 19, 2013
Korea Institute of Energy Research, Daejeon, KR;
Jae Ho Yun, Daejeon, KR;
Jihye Gwak, Daejeon, KR;
SeJin Ahn, Daejeon, KR;
Kyung Hoon Yoon, Daejeon, KR;
Kee Shik Shin, Daejeon, KR;
SeoungKyu Ahn, Daejeon, KR;
Ara Cho, Seoul, KR;
Sang Hyun Park, Daejeon, KR;
Jun Sik Cho, Daejeon, KR;
Jin Su You, Seoul, KR;
Joo Hyung Park, Daejeon, KR;
Young Joo Eo, Daejeon, KR;
KOREA INSTITUTE OF ENERGY RESEARCH, Daejeon, KR;
Abstract
A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a CuZnSnSthin film layer; forming a CuZnSn(S,Se)thin film layer; and forming a CuZnSnSthin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.