The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Sep. 23, 2014
Applicant:

Sanyo Electric Co., Ltd., Moriguchi-shi, Osaka, JP;

Inventors:

Mamoru Arimoto, Gifu, JP;

Tsuyoshi Takahama, Osaka, JP;

Naofumi Hayashi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/0747 (2012.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03529 (2013.01); H01L 31/022441 (2013.01); H01L 31/0747 (2013.01); H01L 31/202 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A solar cell includes a semiconductor substrate of first conductivity type, including first and second principal surfaces; a region of the first conductivity type, including a semiconductor layer structure of the first conductivity type provided on the first principal surface; and a region of an second conductivity type, including a semiconductor layer structure of the second conductivity type provided on the first principal surface. The semiconductor layer structure of the first conductivity type is formed extending into the region of the second conductivity type. Thereby the solar cell is provided with a stack region where the semiconductor layer structure of the second conductivity type is formed on the semiconductor layer structure of the first conductivity type.


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