IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9780223 B1

PDFFull Text
Date of Patent:
Oct. 03, 2017

Filed:

Jul. 14, 2016

Gallium arsenide based materials used in thin film transistor applications

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kaushal K. Singh, Santa Clara, CA (US);

Robert Jan Visser, Menlo Park, CA (US);

Bhaskar Kumar, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Patterson + Sheridan LLP

Primary Examiner:

Cory Eskridge

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/786 (2006.01); B82Y 30/00 (2011.01); C23C 16/30 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 31/072 (2012.01); H01L 31/075 (2012.01); H01L 31/18 (2006.01); H01L 51/42 (2006.01); B82Y 10/00 (2011.01); H01L 21/324 (2006.01); H01L 27/12 (2006.01); H01L 29/207 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78681 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); C23C 16/301 (2013.01); C23C 16/56 (2013.01); H01L 21/0237 (2013.01); H01L 21/0262 (2013.01); H01L 21/02491 (2013.01); H01L 21/02546 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02601 (2013.01); H01L 21/02628 (2013.01); H01L 21/02631 (2013.01); H01L 21/3245 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/207 (2013.01); H01L 29/454 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 31/022425 (2013.01); H01L 31/035227 (2013.01); H01L 31/072 (2013.01); H01L 31/075 (2013.01); H01L 31/184 (2013.01); H01L 31/1864 (2013.01); H01L 51/424 (2013.01); H01L 51/0048 (2013.01); Y02E 10/544 (2013.01); Y02E 10/548 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract

Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based (GaAs) layer formed from the solution based precursor may be incorporated in thin film transistor devices to improve device performance and device speed. In one embodiment, a thin film transistor structure includes a gate insulator layer disposed on a substrate, a GaAs based layer disposed over the gate insulator layer, and a source-drain metal electrode layer disposed adjacent to the GaAs based layer.

Find Patent Forward Citations

Loading…