The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Aug. 30, 2016
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Yuya Maeda, Kawasaki, JP;
Shintaro Nakano, Kawasaki, JP;
Nobuyoshi Saito, Ota, JP;
Hajime Yamaguchi, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes an oxide semiconductor transistor. The oxide semiconductor transistor includes a semiconductor layer including an oxide semiconductor, the semiconductor layer including a source region and a source electrode. The source electrode includes a source conductive layer including copper, a first tantalum-containing region provided between the source conductive layer and the source region, the first tantalum-containing region including tantalum, a first low nitrogen composition region provided between the first tantalum-containing region and the source region, the first low nitrogen composition region including TaN(0<x1<0.5), and a first high nitrogen composition region provided between the first low nitrogen composition region and the source region, the first high nitrogen composition region including TaN(0.5≦x2<1).