The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Feb. 29, 2016
Methods of reducing the electrical and thermal resistance of sic substrates and devices made thereby
Applicant:
Purdue Research Foundation, West Lafayette, IN (US);
Inventor:
James Albert Cooper, Jr., Santa Fe, NM (US);
Assignees:
Purdue Research Foundation, West Lafayette, IN (US);
Global Power Technologies Group, Inc., Lake Forest, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/739 (2006.01); H01L 29/872 (2006.01); H01L 21/04 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/0475 (2013.01); H01L 29/1079 (2013.01); H01L 29/1608 (2013.01); H01L 29/7393 (2013.01); H01L 29/872 (2013.01);
Abstract
A power semiconductor device includes a silicon carbide substrate and at least a first layer or region formed above the substrate. The silicon carbide substrate has a pattern of pits formed thereon. The device further comprising an ohmic metal disposed at least in the pits to form low-resistance ohmic contacts.