The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Aug. 16, 2016
Electronics and Telecommunications Research Institute, Daejeon, KR;
Jong Min Lee, Daejeon, KR;
Byoung-Gue Min, Sejong-si, KR;
Hyung Sup Yoon, Daejeon, KR;
Dong Min Kang, Daejeon, KR;
Dong-Young Kim, Daejeon, KR;
Seong-Il Kim, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Jae Won Do, Daejeon, KR;
Ho Kyun Ahn, Daejeon, KR;
Sang-Heung Lee, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Hyun Wook Jung, Daejeon, KR;
Kyu Jun Cho, Daejeon, KR;
Chull Won Ju, Daejeon, KR;
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Abstract
The present invention relates to a high reliability field effect power device and a manufacturing method thereof. A method of manufacturing a field effect power device includes sequentially forming a transfer layer, a buffer layer, a barrier layer and a passivation layer on a substrate, patterning the passivation layer by etching a first region of the passivation layer, and forming at least one electrode on the first region of the barrier layer exposed by patterning the passivation layer, wherein the first region is provided to form the at least one electrode, and the passivation layer may include a material having a wider bandgap than the barrier layer to prevent a trapping effect and a leakage current of the field effect power device.