The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Dec. 20, 2012
Applicant:
Hitachi Cable, Ltd., Tokyo, JP;
Inventors:
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/16 (2006.01); H01L 29/778 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02502 (2013.01); H01L 29/04 (2013.01); H01L 29/1608 (2013.01); H01L 29/7786 (2013.01);
Abstract
A nitride semiconductor epitaxial wafer includes a substrate, a GaN layer provided over the substrate, and an AlGaN layer provided over the GaN layer. The GaN layer has a wurtzite crystal structure, and a ratio c/a of a lattice constant c in a c-axis orientation of the GaN layer to a lattice constant a in an a-axis orientation of the GaN layer is not more than 1.6266.
Tanaka, Takeshi. (2017). Nitride semiconductor epitaxial wafer and field effect nitride transistor (U.S. Patent No. 9780175). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9780175
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile