The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Jan. 06, 2015
Applicant:
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Inventors:
Hyungjun Kim, Seoul, KR;
Il-Kwon Oh, Seoul, KR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 29/16 (2013.01); H01L 21/0228 (2013.01); H01L 21/02181 (2013.01); H01L 21/02301 (2013.01); H01L 21/02321 (2013.01); H01L 21/02337 (2013.01); H01L 21/02362 (2013.01); H01L 29/66181 (2013.01); H01L 29/94 (2013.01);
Abstract
Provided is a method of removing native oxide from a substrate, the method including exposing the substrate to trimethyl aluminum (TMA) or dicyclopentadienyl magnesium (MgCp) for a predetermined time.
Kim, Hyungjun. (2017). Method of removing oxide from substrate and method of manufacturing semiconductor device using the same (U.S. Patent No. 9780172). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9780172
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile