The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Apr. 20, 2015
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Yuki Horiuchi, Toyota, JP;
Satoru Kameyama, Toyota, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A structure having high, middle, and low impurity concentration regions disposed from a surface side of a substrate is more suitably manufactured. A method of manufacturing a semiconductor device includes: a first implantation of first conductivity type impurities into a first conductivity type semiconductor substrate from a surface; melting and solidifying a first semiconductor region between a depth and the surface, wherein the depth is deeper than a depth having a peak impurity concentration in an increased region where the impurity concentration was increased in the first implantation, and shallower than a deeper end of the increased region; a second implantation of the impurities from the surface into a region shallower than the depth; and melting and solidifying a region in which the impurity concentration was increased in the second implantation.