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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9780146 B1

PDFFull Text
Date of Patent:
Oct. 03, 2017

Filed:

Nov. 24, 2015

Electronic device

Applicant:

SK Hynix Inc., Icheon, KR;

Inventor:

Kyung-Wan Kim, Icheon, KR;

Assignee:

SK HYNIX INC., Icheon, KR;

Attorney:
Primary Examiner:

Quoc Hoang

Int. Cl.
CPC ...
H01L 27/24 (2006.01); G06F 3/06 (2006.01); G06F 12/0802 (2016.01); G06F 13/40 (2006.01); G06F 13/16 (2006.01); H01L 45/00 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 27/11507 (2017.01); H01L 27/1159 (2017.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); G06F 3/0604 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 12/0802 (2013.01); G06F 13/1673 (2013.01); G06F 13/4068 (2013.01); H01L 27/1159 (2013.01); H01L 27/11507 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/147 (2013.01); G06F 2212/222 (2013.01);
Abstract

An electronic device includes a semiconductor memory. The semiconductor memory includes a line-type first electrode layer having at least one protrusion and extending in a first direction, and a plurality of memory elements, each memory element including a variable resistance layer and a second electrode, the variable resistance layers of the memory elements being disposed over a top surface and two parallel side surfaces of the protrusion, respectively, the two parallel side surfaces of the protrusion being arranged in the first direction, the second electrodes of the memory elements being disposed over the variable resistance layers of the memory elements, respectively.

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