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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9780117 B1

PDFFull Text
Expired
Date of Patent:
Oct. 03, 2017

Filed:

Oct. 22, 2014

Semiconductor structure with active device and damaged region

Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Paul A. Nygaard, Carlsbad, CA (US);

Michael A. Stuber, Rancho Santa Fe, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Phat X Cao

Assistant Examiner:

Mohammad M Hoque

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/265 (2006.01); H01L 21/3205 (2006.01); H01L 21/84 (2006.01); H01L 27/06 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/265 (2013.01); H01L 21/32053 (2013.01); H01L 21/84 (2013.01); H01L 27/0629 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/47 (2013.01); H01L 29/66143 (2013.01); H01L 29/66477 (2013.01); H01L 29/7839 (2013.01); H01L 29/78612 (2013.01); H01L 29/872 (2013.01);
Abstract

A semiconductor structure is formed with an active layer having an active device including a body region. The active device is formed by top side processing in and on a top side of a semiconductor on insulator wafer. A damaged region is formed within a portion of the body region by bottom side processing at a bottom side of the semiconductor on insulator wafer, the damaged region having a structure sufficient to prevent a kink effect and self-latching in operation of the active device.

Find Patent Forward Citations

Nygaard, Paul. (2017). Semiconductor structure with active device and damaged region (U.S. Patent No. 9780117). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9780117

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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