The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Jan. 04, 2012
Applicants:

Xu Ouyang, Hopewell Junction, NY (US);

Yunsheng Song, Poughkeepsie, NY (US);

Tso-hui Ting, Stormville, NY (US);

Yongchun Xin, Poughkeepsie, NY (US);

Inventors:

Xu Ouyang, Hopewell Junction, NY (US);

Yunsheng Song, Poughkeepsie, NY (US);

Tso-Hui Ting, Stormville, NY (US);

Yongchun Xin, Poughkeepsie, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 31/26 (2014.01); H01L 21/66 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); G01R 31/2858 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A test structure for an integrated circuit device includes a series inductor, capacitor, resistor (LCR) circuit having one or more inductor elements, with each inductor element having at least one unit comprising a first segment formed in a first metal layer, a second segment connecting the first metal layer to a semiconductor substrate beneath the first metal layer, and a third segment formed in the semiconductor substrate; and a capacitor element connected in series with each inductor element, the capacitor element defined by a transistor gate structure including a gate electrode as a first electrode, a gate dielectric layer, and the semiconductor substrate as a second electrode.


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