The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Jul. 06, 2015
Kobe Steel, Ltd., Kobe-shi, JP;
Nobuyuki Kawakami, Kobe, JP;
Kazushi Hayashi, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Mototaka Ochi, Kobe, JP;
Kobe Steel, Ltd., Kobe-shi, JP;
Abstract
Provided is a method for reliably and simply evaluating the quality of an oxide semiconductor thin film and a laminated body having a protective film on the surface of this oxide semiconductor thin film. Also provided is a method for reliably and simply managing the quality of an oxide semiconductor thin film. This method, which is for evaluating the quality of an oxide semiconductor thin film and a laminated body having a protective film on the surface of this oxide semiconductor thin film, has: a first step, wherein an oxide semiconductor thin film is formed on a substrate, after which the electron state of the oxide semiconductor thin film is measured by a contact method or a noncontact method, thereby evaluating defects arising from in-film defects in the oxide semiconductor thin film; and a second step, wherein the oxide semiconductor thin film is processed on the basis of a condition determined on the basis of that evaluation, after which a protective film is formed on the surface of the oxide semiconductor thin film, and then the electron state of the oxide semiconductor thin film is measured by a contact method or a noncontact method, thereby evaluating defects arising from defects at the interface between the oxide semiconductor thin film and the protective film.