The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Feb. 21, 2011
Applicants:

Hervé Besaucèle, Gennevilliers, FR;

Bruno Godard, Les Ulis, FR;

Cyril Dutems, Colombes, FR;

Inventors:

Hervé Besaucèle, Gennevilliers, FR;

Bruno Godard, Les Ulis, FR;

Cyril Dutems, Colombes, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21K 5/04 (2006.01); H01L 21/04 (2006.01); B23K 26/06 (2014.01); B23K 26/067 (2006.01); B23K 26/073 (2006.01); G02B 27/09 (2006.01); B23K 26/066 (2014.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H01L 21/04 (2013.01); B23K 26/066 (2015.10); B23K 26/0608 (2013.01); B23K 26/0673 (2013.01); B23K 26/073 (2013.01); G02B 27/0955 (2013.01); H01L 21/268 (2013.01);
Abstract

An apparatus for irradiating semiconductor material is disclosed having, a laser generating a primary laser beam, an optical system and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams. Wherein the shape and/or size of the individual apertures corresponds to that of a common region of a semiconductor material layer to be irradiated. The optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the use of such an apparatus in semiconductor device manufacturing is disclosed.


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