The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Nov. 17, 2016
Applicant:

Monolithic Power Systems Inc., San Jose, CA (US);

Inventors:

Tianzhu Zhang, Chengdu, CN;

Da Chen, Chengdu, CN;

Assignee:

Monolithic Power Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 16/0408 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01);
Abstract

A voltage control circuit for a memory cell having a floating gate transistor and a capacitive device, comprising a first input terminal, a second input terminal, a first output terminal and a second input terminal, wherein the first input terminal is configured to receive a power supply voltage, the second input terminal is configured to receive a ground reference, and wherein based on the power supply voltage and the ground reference, the first output terminal and the second output terminal respectively provides a first voltage signal and a second voltage signal, and wherein a voltage value of the first voltage signal is twice the power supply voltage, and a maximum of a voltage difference between the first voltage signal and the second voltage signal is three times the power supply voltage.


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