The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Jun. 15, 2016
Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

François Tailliet, Fuveau, FR;

Marc Battista, Marseilles, FR;

Victorien Brecte, Aix-en-Provence, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0433 (2013.01); G11C 16/24 (2013.01);
Abstract

One embodiment provides a method for reading a memory cell of a memory plane of a memory of the erasable electrically-programmable ROM type. The word line and of the bit line to which the memory cell belongs are selected and the content of the cell is read via a read amplifier. One input of the read amplifier is connected to the bit line and pre-charged at a pre-charge voltage. During the read operation, a source voltage higher than the pre-charge voltage is applied to the source of the floating-gate transistor of the cell. A read current flows from the cell towards the input of the read amplifier and then flows through a programmed cell.


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