The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Oct. 22, 2015
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Katsunori Danno, Susono, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A method for producing a SiC single crystal, comprising using a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface to grow a SiC single crystal from a seed crystal substrate, wherein the Si—C solution includes Si and Cr, the boron density difference Bs−Bg between the boron density Bs in the seed crystal substrate and the boron density Bg in the growing single crystal is 1×10/cmor greater, the chromium density difference Crg−Crs between the chromium density Crs in the seed crystal substrate and the chromium density Crg in the growing single crystal is 1×10/cmor greater, and the nitrogen density difference Ng−Ns between the nitrogen density Ns in the seed crystal substrate and the nitrogen density Ng in the growing single crystal is 3.5×10/cmto 5.8×10/cm.