The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Aug. 01, 2013
Stmicroelectronics S.r.l., Agrate, IT;
Biomérieux S.a., Marcy l'Etoile, FR;
Giuseppe Emanuele Spoto, Trecastagni, IT;
Luigi Giuseppe Occhipinti, Ragusa, IT;
Cristian Dall'Oglio, Niscemi, IT;
Crocifisso Marco Antonio Renna, Gela, IT;
Laurent Drazek, Grenoble, FR;
STMicroelectronics S.r.l., Agrate Brianza, IT;
bioMérieux S.A., Marcy l'Etoile, FR;
Abstract
A microfluidic device (-), comprising: a semiconductor body () having a first side () and a second side () opposite to one another, and housing, at the first side, a plurality of wells (), having a first depth; an inlet region () forming an entrance point for a fluid to be supplied to the wells; a main channel () fluidically connected to the inlet region, and having a second depth; and a plurality of secondary channels () fluidically connecting the main channel to a respective well, and having a third depth. The first depth is higher than the second depth, which in turn is higher than the third depth. According to an aspect, the microfluidic device further comprises a cover layer (), arranged above the first side of the semiconductor body, configured for sealing the wells and provided with at least a first valve hole () which extends through the cover layer and overlaps, at least partially, the secondary channels; and a flexible layer (), arranged above the cover layer and provided with at least a protrusion () extending through the first valve hole towards the semiconductor body and overlapping, at least partially, the secondary channels, the flexible layer being configured such that, when a pressure is applied on it, the protrusion contacts the semiconductor body and enters the secondary channels thus fluidically isolating the wells from one another.