The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Mar. 27, 2015
Nanotek Instruments, Inc., Dayton, OH (US);
Qing Fang, Marysville, OH (US);
Aruna Zhamu, Springboro, OH (US);
Bor Z. Jang, Centerville, OH (US);
Nanotek Instruments, Inc., Dayton, OH (US);
Abstract
Disclosed is a process for producing silicon nanowires having a diameter or thickness less than 100 nm, comprising: (A) preparing a solid silicon source material in a particulate form having a size from 0.2 μm to 20 μm or in a porous structure form having a specific surface area greater than 50 m/g; (B) depositing a catalytic metal, in the form of nano particles having a size from 0.5 nm to 100 nm or a coating having a thickness from 1 nm to 100 nm, onto surfaces of the silicon source material to form a catalyst metal-coated silicon material; and (C) exposing the catalyst metal-coated silicon material to a high temperature environment, from 300° C. to 2,000° C., for a period of time sufficient to enable a catalytic metal-catalyzed growth of multiple silicon nanowires from the silicon source material.