The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Jan. 30, 2017
Applicants:

Ki-woong Kim, Hwaseong-si, KR;

Kee-won Kim, Suwon-si, KR;

Se-chung OH, Yongin-si, KR;

Yong-sung Park, Suwon-si, KR;

Ju-hyun Kim, Hwaseong-si, KR;

Inventors:

Ki-woong Kim, Hwaseong-si, KR;

Kee-won Kim, Suwon-si, KR;

Se-chung Oh, Yongin-si, KR;

Yong-sung Park, Suwon-si, KR;

Ju-hyun Kim, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic device includes a free layer; a pinned layer; a tunnel barrier disposed between the free layer and the pinned layer; a polarization enhancement layer disposed between the tunnel barrier and the pinned layer; and a blocking layer disposed between the polarization enhancement layer and the pinned layer, wherein the blocking layer includes a first diffusion trap layer and a second diffusion trap layer disposed on the first diffusion trap layer.


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