The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Jul. 19, 2016
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventor:

Shiro Sakai, Tokushima, JP;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 21/02 (2006.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0265 (2013.01); H01L 21/02458 (2013.01); H01L 21/02639 (2013.01); H01L 21/02642 (2013.01); H01L 21/02664 (2013.01); H01L 33/0066 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01);
Abstract

A method of manufacturing a semiconductor substrate includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer, removing the metallic material layer under the first portion of the second semiconductor layer by dipping the substrate in a solution, forming a second portion of the second semiconductor layer on the first portion of the second semiconductor layer, and forming a cavity entirely through a portion of the first semiconductor layer located under where the metallic material layer was removed.


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