The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9773938 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 26, 2017

Filed:

Oct. 29, 2012
Applicant:

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventors:

Shaoying Xu, Beijing, CN;

Zhenyu Xie, Beijing, CN;

Jian Guo, Beijing, CN;

Xu Chen, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 31/18 (2006.01); H01L 31/105 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 27/14603 (2013.01); H01L 27/14658 (2013.01); H01L 27/14692 (2013.01); H01L 31/1055 (2013.01);
Abstract

An embodiment of the present invention provides a manufacturing method of an amorphous-silicon flat-panel X-ray sensor; the method reduces the number of mask plates to be used, simplifies the production processes, saves production costs, while also improving the product yield. The manufacturing method comprises: on a substrate, after a gate scan line is formed, forming a data line, a TFT switch element and a photosensitive element through one patterning process, wherein on the mask plate used in the patterning process, a region corresponding to a channel of the TFT switch element is semi-transmissive, whereas regions respectively corresponding to the data line, the photosensitive element and the portion of the TFT switch element other than the channel thereof are non-transmissive; thereafter, on the substrate formed with the TFT switch element and the photosensitive element, a passivation layer and a bias line are formed.


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