The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Jun. 29, 2015
Applicants:

Gang Yu, Santa Barbara, CA (US);

Chan-long Shieh, Paradise Valley, AZ (US);

Juergen Musolf, Santa Barbara, CA (US);

Fatt Foong, Goleta, CA (US);

Tian Xiao, Santa Barbara, CA (US);

Inventors:

Gang Yu, Santa Barbara, CA (US);

Chan-Long Shieh, Paradise Valley, AZ (US);

Juergen Musolf, Santa Barbara, CA (US);

Fatt Foong, Goleta, CA (US);

Tian Xiao, Santa Barbara, CA (US);

Assignee:

CBRITE INC., Goleta, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/0228 (2013.01); H01L 21/02266 (2013.01); H01L 21/02269 (2013.01); H01L 21/02271 (2013.01); H01L 21/02282 (2013.01); H01L 21/02565 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/42356 (2013.01); H01L 29/66969 (2013.01); H01L 29/78606 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.


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