The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Apr. 19, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Borna Obradovic, Leander, TX (US);
Chris Bowen, Austin, TX (US);
Titash Rakshit, Austin, TX (US);
Palle Dharmendar, Austin, TX (US);
Mark Rodder, Dallas, TX (US);
Abstract
A vertical field effect device includes a substrate and a vertical channel including InGaAs on the substrate. The vertical channel includes a pillar that extends from the substrate and includes opposing vertical surfaces. The device further includes a stressor layer on the opposing vertical surfaces of the vertical channel. The stressor layer includes a layer of epitaxial crystalline material that is epitaxially formed on the vertical channel and that has lattice constant in a vertical plane corresponding to one of the opposing vertical surfaces of the vertical channel that is greater than a corresponding lattice constant of the vertical channel.