The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Aug. 18, 2016
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A semiconductor device includes: an electron transit layer constituted of GaN; an electron supply layer constituted of InAlGaN (0≦x1<1, 0≦y1<1, 0<1−x1−y1<1) and provided on the electron transit layer; a source electrode and a drain electrode that are provided on the electron supply layer and located apart from each other; a threshold voltage adjustment layer constituted of InAlGaN (0≦x2<1, 0≦y2<1, 0<1−x2−y2≦1) of a p-type and provided on a part of the electron supply layer located between the source electrode and the drain electrode; and a gate electrode provided on the threshold voltage adjustment layer. A high resistance layer is respectively interposed both between the gate electrode and the threshold voltage adjustment layer, and between the threshold voltage adjustment layer and the electron supply layer.