The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Oct. 06, 2014
Applicants:
Akitaka Soeno, Toyota, JP;
Yuichi Takeuchi, Obu, JP;
Narumasa Soejima, Seto, JP;
Inventors:
Assignees:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01);
Abstract
A method is provided for manufacturing an insulated gate type switching device. The method includes: implanting second conductivity type impurities into a surface of a semiconductor substrate so as to form a second region of a second conductivity type in the surface; forming a third region of the second conductivity type having a second conductivity type impurity density lower than the second region on the surface by epitaxial growth: and forming a trench gate electrode.