The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Mar. 08, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hyun-Suk Lee, Suwon-si, KR;

Jun-Goo Kang, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01L 27/0629 (2013.01); H01L 28/90 (2013.01); H01L 27/10852 (2013.01);
Abstract

A capacitor may include a lower electrode structure, a dielectric layer on the lower electrode structure, and an upper electrode on the dielectric layer. The lower electrode structure may include first to third lower electrodes sequentially stacked, a first oxidation barrier pattern structure between the first lower electrode and the second lower electrode, and a second oxidation barrier pattern structure between the second lower electrode and the third lower electrode. The first oxidation barrier pattern structure may include first and second oxidation barrier patterns sequentially stacked on the first lower electrode, and the second oxidation barrier pattern structure may include third and fourth oxidation barrier patterns sequentially stacked on the second lower electrode.


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