The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Mar. 10, 2015
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Satoshi Inaba, Seongnam-si, KR;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, there is provided a magnetoresistive memory device. The memory device includes active areas arranged on a semiconductor substrate, resistance change elements arrayed to matrix in an X direction and a Y direction above the substrate, and selective transistors provided to correspond to the respective resistance change elements. A plurality of gate electrodes of the selective transistors are spaced apart at regular intervals in the X direction and arranged along the Y direction. Each of the active areas is provided to cross two of the gate electrodes adjacent to each other, such as to be along the X direction at a portion crossing the gate electrodes, and formed to be inclined with respect to the X direction between the adjacent gate electrodes.